Electron spin contrast of Purcell-enhanced nitrogen-vacancy ensembles in nanodiamonds
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چکیده
The 200-nm thick TiN films used in this work were grown on c-sapphire substrates (GT Crystal Systems, LLC, USA) using DC reactive magnetron sputtering. The deposition was performed in Ar-N2 atmosphere with a pressure of 5mTorr and gas flow rates of Ar and N2 being 4 and 6 sccm, respectively. During the deposition, the substrates were maintained at 800oC and the deposition rate was kept at approximately 2 nm/min. The TiN is expected to have epitaxial <111> orientation structure, as has been demonstrated in previous work [S1].
منابع مشابه
Electron spin contrast of Purcell-enhanced nitrogen-vacancy ensembles in nanodiamonds
S. Bogdanov,1,2,* M. Y. Shalaginov,1,2 A. Akimov,3,4,5 A. S. Lagutchev,2 P. Kapitanova,6 J. Liu,7 D. Woods,1,2 M. Ferrera,8 P. Belov,6 J. Irudayaraj,7 A. Boltasseva,1,2 and V. M. Shalaev1,2,3 1School of Electrical and Computer Engineering, Purdue Quantum Center, Purdue University, West Lafayette, Indiana 47907, USA 2Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, ...
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